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irfz44es/l hexfet ? power mosfet pd - 9.1714 11/18/97 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 48 i d @ t c = 100c continuous drain current, v gs @ 10v ? 34 a i dm pulsed drain current ? ? 192 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? ? 220 mj i ar avalanche current ? 29 a e ar repetitive avalanche energy ? 11 mj dv/dt peak diode recovery dv/dt ? ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 1.4 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance www.irf.com 1 l advanced process technology l surface mount (irfz44es) l low-profile through-hole (irfz44el) l 175c operating temperature l fast switching l fully avalanche rated fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irfz44el) is available for low-profile applications. description v dss = 60v r ds(on) = 0.023 w i d = 48a 2 d pak to-262 s d g preliminary
irfz44es/l 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 29a, v gs = 0v ? t rr reverse recovery time CCC 69 104 ns t j = 25c, i f = 29a q rr reverse recovery charge CCC 177 266 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 48 192 a ? starting t j = 25c, l = 520h r g = 25 w , i as = 29a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ? i sd 29a, di/dt 320a/s, v dd v (br)dss , t j 175c ? pulse width 300s; duty cycle 2%. ? uses irfz44e data and test conditions ** when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended soldering techniques refer to application note #an-994. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a dv (br)dss /dt j breakdown voltage temp. coefficient CCC 0.063 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.023 w v gs = 10v, i d = 29a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 15 CCC CCC s v ds = 30v, i d = 29a ? CCC CCC 25 a v ds = 60v, v gs = 0v CCC CCC 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 60 i d = 29a q gs gate-to-source charge CCC CCC 13 nc v ds = 48v q gd gate-to-drain ("miller") charge CCC CCC 23 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 12 CCC v dd = 30v t r rise time CCC 60 CCC i d = 29a t d(off) turn-off delay time CCC 70 CCC r g = 15 w t f fall time CCC 70 CCC r d = 1.1 w , see fig. 10 ?? between lead, CCC CCC and center of die contact c iss input capacitance CCC 1360 CCC v gs = 0v c oss output capacitance CCC 420 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 160 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) i gss ns i dss drain-to-source leakage current nh 7.5 l s internal source inductance
irfz44es/l www.irf.com 3 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 4 5 6 7 8 9 10 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 175 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 48a fig 4. normalized on-resistance vs. temperature
irfz44es/l 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 29 v = 30v ds v = 48v ds 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
irfz44es/l www.irf.com 5 r d fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % v gs r g d.u.t. 10v + - 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % v gs r g d.u.t. 10v v dd 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfz44es/l 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 12a 21a 29a
irfz44es/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfz44es/l 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) ref . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r ef. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 d im ens io n s after so ld er d ip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - g ate 2 - d rain 3 - so u rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week a ssem bly lot code f530s 9b 1m 9246 a
irfz44es/l www.irf.com 9 package outline to-262 outline to-262 part marking information
irfz44es/l 10 www.irf.com tape & reel information d 2 pak world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 11/97 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) m in . 30.40 (1.197) m ax. 26.40 (1.039) 24.40 (.961) notes : 1. c o m f o rm s to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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